Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES
•
Low current (max. 100 mA)
•
High voltage (max. 350 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BST15 and BST16.
MARKING
TYPE NUMBER
BST39
BST40
MARKING CODE
AT1
AT2
1
Bottom view
2
3
handbook, halfpage
BST39; BST40
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
2
3
1
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BST39
BST40
V
CEO
collector-emitter voltage
BST39
BST40
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
350
250
5
100
200
100
1.3
+150
150
+150
V
V
V
mA
mA
mA
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
400
300
V
V
MIN.
MAX.
UNIT
2000 Jul 03
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Philips Semiconductors
Product specification
NPN high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
BST39; BST40
VALUE
96
16
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 300 V
I
C
= 0; V
EB
= 5 V
I
C
= 20 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
−
−
40
−
−
MIN.
MAX.
20
100
−
500
2
−
mV
pF
MHz
UNIT
nA
nA
collector-emitter saturation voltage I
C
= 50 mA; I
B
= 4 mA
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 70
2000 Jul 03
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
DATA SHEET STATUS
DATA SHEET STATUS
Objective specification
PRODUCT
STATUS
Development
DEFINITIONS
(1)
BST39; BST40
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2000 Jul 03
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