934056841127 datasheet, PDF - EEWORLD Datasheet

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934056841127: DescriptionTRANSISTOR 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size286KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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934056841127 Overview

TRANSISTOR 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power

934056841127 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	90 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (ID)	66 A
Maximum drain-source on-resistance	0.0136 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	228 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

934056841127 Related Products

	934056841127	934056842118	934056840118
Description	TRANSISTOR 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power	TRANSISTOR 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power	TRANSISTOR 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
Is it Rohs certified?	conform to	conform to	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	PLASTIC, D2PAK-3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	90 mJ	90 mJ	90 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V	25 V	25 V
Maximum drain current (ID)	66 A	66 A	66 A
Maximum drain-source on-resistance	0.0136 Ω	0.0136 Ω	0.0136 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1
Number of terminals	3	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	228 A	228 A	228 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES
Terminal form	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Parts packaging code	TO-220AB	TO-252AA	-
JEDEC-95 code	TO-220AB	TO-252AA	-
Base Number Matches	1	1	-

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