IRHG7214 datasheet, PDF - EEWORLD Datasheet

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IRHG7214: DescriptionRADIATION HARDENED POWER MOSFET THRU-HOLE; CategoryDiscrete semiconductor The transistor; File Size242KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRHG7214 Overview

RADIATION HARDENED POWER MOSFET THRU-HOLE

IRHG7214 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	IN-LINE, R-CDIP-T14
Reach Compliance Code	compli
ECCN code	EAR99
Other features	RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	75 mJ
Configuration	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	0.5 A
Maximum drain current (ID)	0.5 A
Maximum drain-source on-resistance	2.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-036AB
JESD-30 code	R-CDIP-T14
JESD-609 code	e0
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.4 W
Maximum pulsed drain current (IDM)	2 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

IRHG7214 Related Products

	IRHG7214	IRHG3214	IRHG4214	IRHG8214
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE	RADIATION HARDENED POWER MOSFET THRU-HOLE	RADIATION HARDENED POWER MOSFET THRU-HOLE	RADIATION HARDENED POWER MOSFET THRU-HOLE
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	IN-LINE, R-CDIP-T14	IN-LINE, R-CDIP-T14	IN-LINE, R-CDIP-T14	IN-LINE, R-CDIP-T14
Reach Compliance Code	compli	compliant	compli	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	75 mJ	75 mJ	75 mJ	75 mJ
Configuration	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	250 V	250 V	250 V	250 V
Maximum drain current (Abs) (ID)	0.5 A	0.5 A	0.5 A	0.5 A
Maximum drain current (ID)	0.5 A	0.5 A	0.5 A	0.5 A
Maximum drain-source on-resistance	2.4 Ω	2.4 Ω	2.4 Ω	2.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-036AB	MO-036AB	MO-036AB	MO-036AB
JESD-30 code	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14
JESD-609 code	e0	e0	e0	e0
Number of components	4	4	4	4
Number of terminals	14	14	14	14
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	1.4 W	1.4 W	1.4 W	1.4 W
Maximum pulsed drain current (IDM)	2 A	2 A	2 A	2 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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