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ER3DB-T

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size88KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

ER3DB-T Overview

Rectifier Diode,

ER3DB-T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ECCN codeEAR99
JESD-609 codee0
Humidity sensitivity level1
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736
Marilla
Street Chatsworth

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$ %    !"#
ER3AB
THRU
ER3JB
3 Amp Super Fast
Recovery
Silicon Rectifier
50 to 600 Volts
DO-214AA
(SMB) (LEAD FRAME)
A
Features
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Easy Pick And Place
High Temp Soldering: 260°C for 10 Seconds At Terminals\
Super Fast Recovery Times For High Effieciency
Maximum Ratings
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 16
°C/W
Junction To Lead
MCC
Catalog
Number
ER3AB
ER3BB
ER3CB
ER3DB
ER3GB
ER3JB
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
I
F(AV)
I
FSM
3.0A
100A
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
B
ER3AB
ER3BB
ER3CB
ER3DB
ER3GB
ER3JB
C
F
D
H
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ER3AB-3DB
ER3GB
ER3JB
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
Typical Junction
Capacitance
T
L
=
75°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
E
DIMENSIONS
INCHES
MIN
.160
.130
.006
.030
.200
.079
.075
.002
MM
MIN
4.06
3.30
0.15
0.76
5.08
2.01
1.91
0.05
V
F
.95V
1.25V
1.70V
5µA
200µA
35ns
45pF
I
FM
= 3.0A;
T
J
= 25°C
MAX
.185
.155
.012
.060
.220
.103
.087
.008
MAX
4.70
3.94
0.31
1
..52
5.59
2.62
2.21
0.203
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.106
I
R
T
J
= 25°C
T
J
= 100°C
0.083”
T
rr
C
J
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
0.050”
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
Revision: 5
www.mccsemi.com
1 of 4
2006/10/05
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