Advance Technical Information
GigaMOS
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN160N30T
R
DS(on)
≤
≤
t
rr
V
DSS
I
D25
=
=
300V
130A
19mΩ
Ω
200ns
miniBLOC, SOT-227
E153432
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
300
300
±20
±30
130
440
40
3
20
900
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500
V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
ISOL
≤
1mA
t = 1 minute
t = 1 second
300
260
2500
3000
1.5/13
1.3/11.5
30
Mounting Torque
Terminal Connection Torque
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 60A, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
300
2.5
5.0
±200
V
V
nA
Applications
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100128(03/09)
50
µA
3 mA
19 mΩ
© 2009 IXYS CORPORATION, All Rights Reserved
IXFN160N30T
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.05
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 80A
Resistive Switching Times
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 80A
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min.
Typ.
Max.
100
160
28
1770
125
37
38
105
25
335
123
56
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.138
°C/W
°C/W
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 60A, V
GS
= 0V, Note 1
I
F
= 80A, V
GS
= 0V
-di/dt = 100A/µs
V
R
= 75V
1.09
13
Characteristic Values
Min. Typ.
Max.
160
640
1.3
A
A
V
200 ns
µC
A
Note 1: Pulse Test, t
≤
300µs; Duty Cycle, d
≤
2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN160N30T
Fig. 1. Output Characteristics
@ 25ºC
160
140
120
6V
V
GS
= 10V
7V
250
300
V
GS
= 10V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
I
D
- Amperes
100
80
60
40
5.5V
200
6V
150
5.5V
100
50
20
5V
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
0
2
4
6
8
10
12
14
16
18
20
5V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125ºC
160
140
120
V
GS
= 10V
7V
6V
2.8
2.6
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 80A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
D
= 160A
I
D
= 80A
I
D
- Amperes
100
80
5V
60
40
20
0.6
0
0
1
2
3
4
5
6
7
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 80A Value
vs. Drain Current
2.8
2.6
2.4
V
GS
= 10V
120
140
Fig. 6. Maximum Drain Current vs.
Case Temperature
T
J
= 125ºC
100
R
DS(on)
- Normalized
2.2
I
D
- Amperes
T
J
= 25ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
40
80
120
160
200
240
280
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFN160N30T
Fig. 7. Input Admittance
200
180
160
140
T
J
= 125ºC
25ºC
- 40ºC
250
300
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
200
120
100
80
60
40
20
0
3.0
3.4
3.8
4.2
25ºC
150
125ºC
100
50
0
4.6
5.0
5.4
5.8
6.2
0
20
40
60
80
100
120
140
160
180
200
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
8
250
7
10
9
V
DS
= 150V
I
D
= 80A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
200
150
100
50
6
5
4
3
2
1
0
0
0
50
100
150
200
250
300
350
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
Capacitance - PicoFarads
Ciss
R
DS(
on
)
Limit
25µs
Coss
1,000
I
D
- Amperes
10,000
100
100µs
10
T
J
= 150ºC
Crss
100
0
5
10
15
20
25
30
35
40
1
1
T
C
= 25ºC
Single Pulse
1ms
10
100
1000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_160N30T (9E)03-23-09
IXFN160N30T
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z
(th)JC
- ºC / W
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_160N30T (9E)03-23-09
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