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ZXTN2010ASTOA

Description
Small Signal Bipolar Transistor, 4.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size103KB,6 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZXTN2010ASTOA Overview

Small Signal Bipolar Transistor, 4.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon

ZXTN2010ASTOA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)4.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
ZXTN2010A
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY
BV
CEO
= 60V : R
SAT
= 34m ; I
C
= 4.5A
DESCRIPTION
Packaged in the E-line outline this new low saturation 60V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
Extemely low equivalent on-resistance;
R
SAT
= 34m at 5A
4.5 amps continuous current
Up to 15 amps peak current
Very low saturation voltages
E-LINE
APPLICATIONS
Emergency lighting circuits
Motor driving (including DC fans)
Solenoid, relay and actuator drivers
DC modules
Backlight inverters
ORDERING INFORMATION
DEVICE
ZXTN2010ASTOA
ZXTN2010ASTZ
QUANTITY
2000 units / reel
2000 units / carton
DEVICE MARKING
ZXT
N20
10
PINOUT
ISSUE 1 - JUNE 2005
1
SEMICONDUCTORS

ZXTN2010ASTOA Related Products

ZXTN2010ASTOA ZXTN2010A ZXTN2010ASTZ
Description Small Signal Bipolar Transistor, 4.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon Transistor, Small Signal Bipolar Transistor, 4.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code not_compliant not_compliant not_compliant
JESD-609 code e3 e3 e3
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Base Number Matches 1 1 1
ECCN code EAR99 - EAR99
Maximum collector current (IC) 4.5 A - 4.5 A
Collector-emitter maximum voltage 60 V - 60 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 20 - 20
JESD-30 code R-PSIP-W3 - R-PSIP-W3
Humidity sensitivity level 1 - 1
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form IN-LINE - IN-LINE
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type NPN - NPN
Certification status Not Qualified - Not Qualified
surface mount NO - NO
Terminal form WIRE - WIRE
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature 40 - 40
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 130 MHz - 130 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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