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M29DW640F70ZE1F

Description
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
Categorystorage    storage   
File Size1MB,74 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M29DW640F70ZE1F Overview

4M X 16 FLASH 3V PROM, 70 ns, PBGA48

M29DW640F70ZE1F Parametric

Parameter NameAttribute value
Parts packaging codeBGA
package instructionTFBGA,
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time70 ns
Spare memory width8
startup blockBOTTOM/TOP
JESD-30 codeR-PBGA-B48
length8 mm
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
typeNOR TYPE
width6 mm
Base Number Matches1
M29DW640F
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)
3V Supply Flash Memory
Feature summary
Supply voltage
– V
CC
= 2.7V to 3.6V for Program, Erase and
Read
– V
PP
=12V for Fast Program (optional)
Asynchronous Page Read mode
– Page Width 8 Words
– Page Access 25, 30ns
– Random Access 60, 70ns
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes at-a-time Program
Memory blocks
– Quadruple Bank Memory Array:
8Mbit+24Mbit+24Mbit+8Mbit
– Parameter Blocks (at both Top and Bottom)
Dual operations
– While Program or Erase in a group of
banks (from 1 to 3), Read in any of the
other banks
Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
V
PP
/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security Code
Extended Memory Block
– Extra block used as security block or to
store additional information
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
6 x 8 mm
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201
ECOPACK
®
packages available
December 2007
Rev 4
1/74
www.numonyx.com
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