WMS256K16-XXX
256Kx16 MONOLITHIC SRAM, SMD 5962-96902
FEATURES
Access Times 17, 20, 25, 35ns
MIL-STD-883 Compliant Devices Available
Packaging
• 44 pin Ceramic SOJ (Package 102)
• 44 lead Ceramic Flatpack (Package 225)
Organized as 256Kx16
Data Byte Control:
• Lower Byte (LB#) = I/O
1-8
• Upper Byte (UB#) = I/O
9-16
2V Minimum Data Retention for battery back up operation
(WMS256K16L-XXX Low Power Version Only)
Commercial, Industrial and Military Temperature Range
5V Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
PIN CONFIGURATION FOR WMS256K16-XXX
44 CSOJ
44 FlatpacK
TOP VIEW
A0
A1
A2
A3
A4
CS#
I/O1
I/O2
I/O3
I/O4
V
CC
GND
I/O5
I/O6
I/O7
I/O8
WE#
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
OE#
UB#
LB#
I/O16
I/O15
I/O14
I/O13
GND
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
PIN DESCRIPTION
A
0-17
LB#
UB#
I/O
1-16
CS#
OE#
WE#
V
CC
GND
NC
Address Inputs
Lower-Byte Control (I/O
1-8
)
Upper-Byte Control (I/O
9-16
)
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
No Connection
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2013
Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
TRUTH TABLE
CS#
H
L
L
L
WE#
X
H
X
H
OE#
X
H
X
L
LB#
X
X
H
L
H
L
L
H
L
UB#
X
X
H
H
L
L
H
L
L
Mode
Not Select
Output Disable
Read
Data I/O
I/O
1-8
High Z
High Z
Data Out
High Z
Data Out
Data In
High Z
Data In
I/O
9-16
High Z
High Z
High Z
Data Out
Data Out
High Z
Data In
Data In
Power
Standby
Active
Active
L
L
X
Write
Active
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
VG
TJ
V
CC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
V
CC
+0.5
150
7.0
Unit
°C
°C
V
°C
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.3
-55
Max
5.5
V
CC
+ 0.3
+0.8
+125
Unit
V
V
V
°C
CAPACITANCE
T
A
= +25°C
Parameter
Input capacitance
Output capacitance
Symbol
C
IN
C
OUT
Condition
V
IN
= 0V, f = 1.0MHz
V
OUT
= 0V, f = 1.0MHz
Max
20
20
Unit
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Symbol
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 6mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
Min
Max
10
10
275
17
0.4
Units
μA
μA
mA
mA
V
V
2.4
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY)
-55°C
≤
T
A
≤
+125°C
Parameter
Data Retention Supply Voltage
Data Retention Current
Symbol
VDR
I
CCDR
1
Conditions
CS#
≥
V
CC
-0.2V
V
CC
= 3V
Min
2.0
Typ
1.0
Max
5.5
8.0
Units
V
mA
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2013
Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
LB#, UB# Access Time
LB#, UB# Enable to Low Z Output
LB#, UB# Disable to High Z Output
1. This parameter is guaranteed by design but not tested.
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
t
BA
t
BLZ
1
t
BHZ
1
-17
Min
17
0
17
10
2
0
9
9
10
0
9
0
5
0
Max
17
0
Min
20
-20
Max
20
0
20
12
5
0
10
10
12
0
10
Min
25
-25
Max
25
0
25
15
5
0
12
12
14
0
12
Min
35
-35
Max
35
35
20
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
15
15
17
15
AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
LB#, UB# Valid to End of Write
1. This parameter is guaranteed by design but not tested.
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
t
BW
-17
Min
17
14
14
10
14
0
2
0
0
14
Max
Min
20
17
17
12
17
0
2
0
0
17
-20
Max
Min
25
20
20
15
20
0
2
0
0
20
-25
Max
Min
35
25
25
20
25
0
2
0
0
25
-35
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9
10
10
15
AC TEST CIRCUIT
Parameter
Input Pulse Levels
I
OL
Current Source
AC TEST CONDITIONS
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
NOTES:
Vz is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
Vz is typically the midpoint of V
OH
and V
OL
.
I
OL
& IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
D.U.T.
C
eff
= 50 pf
V
Z
»
1.5V
(Bipolar Supply)
I
OH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2013
Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
TIMING WAVEFORM – READ CYCLE
t
RC
ADDRESS
t
AA
t
RC
ADDRESS
t
AA
LB#, UB#
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
OE#
READ CYCLE 1 (CS# = OE# = V
IL
, UB# or LB# = V
IL
, WE# = V
IH
)
t
OE
t
OLZ
DATA I/O
HIGH IMPEDANCE
READ CYCLE 2 (WE# = V
IH
)
DATA VALID
t
OHZ
t
BA
t
BLZ
t
CLZ
t
BHZ
CS#
t
ACS
t
CHZ
WRITE CYCLE – WE# CONTROLLED
t
WC
ADDRESS
t
AW
t
CW
CS#
t
AH
t
BW
LB#, UB#
t
AS
WE#
t
WP
t
OW
t
WHZ
t
DW
DATA VALID
t
DH
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
t
WC
ADDRESS
WRITE CYCLE – LB#, UB# CONTROLLED
t
WC
ADDRESS
t
AS
CS#
t
AW
t
CW
t
BW
t
AH
CS#
t
AS
t
AW
t
CW
t
BW
t
AH
LB#, UB#
LB#, UB#
t
WP
WE#
t
WP
WE#
t
DW
DATA I/O
DATA VALID
t
DH
DATA I/O
t
DW
DATA VALID
t
DH
WRITE CYCLE 2, CS# CONTROLLED
WRITE CYCLE 3, LB#, UB# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2013
Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
PACKAGE 102: 44 LEAD, CERAMIC SOJ
28.70 (1.13) ± 0.25 (0.010)
0.2 (0.008)
± 0.05 (0.002)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
11.3 (0.446)
± 0.2 (0.009)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
1.27 (0.050) TYP
26.7 (1.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK
28.45 (1.120)
±
0.26 (0.010)
2.60 (0.102)
MAX
12.95 (0.510)
±
0.13 (0.005)
10.16 (0.400)
±
0.51 (0.020)
0.43 (0.017)
±
0.05 (0.002)
26.67 (1.050) TYP
0.14 (0.006)
±
0.05 (0.002)
1.27 (0.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2013
Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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