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XN5531TX

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size239KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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XN5531TX Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN

XN5531TX Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage10 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)75
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)1900 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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