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MOD1019

Description
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size421KB,5 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
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MOD1019 Overview

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel,

MOD1019 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-CDFM-P12
Reach Compliance Codecompliant
Maximum collector current (IC)35 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-CDFM-P12
Number of components6
Number of terminals12
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

MOD1019 Related Products

MOD1019 MOD1012 MOD1006 MOD1007 MOD1001 MOD1023 MOD1014
Description Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 40A I(C), 300V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel,
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction FLANGE MOUNT, R-CDFM-P12 FLANGE MOUNT, R-CDFM-P12 FLANGE MOUNT, S-CDFM-P12 FLANGE MOUNT, R-CDFM-P12 FLANGE MOUNT, S-CDFM-P12 FLANGE MOUNT, R-CDFM-P12 FLANGE MOUNT, S-CDFM-P12
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
Maximum collector current (IC) 35 A 48 A 20 A 20 A 40 A 50 A 40 A
Collector-emitter maximum voltage 600 V 600 V 600 V 600 V 300 V 600 V 600 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-CDFM-P12 R-CDFM-P12 S-CDFM-P12 R-CDFM-P12 S-CDFM-P12 R-CDFM-P12 S-CDFM-P12
Number of components 6 4 4 6 2 4 2
Number of terminals 12 12 12 12 12 12 12
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR SQUARE RECTANGULAR SQUARE RECTANGULAR SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker - SENSITRON - SENSITRON SENSITRON SENSITRON SENSITRON
Other features - HIGH SPEED HIGH SPEED HIGH SPEED - - HIGH SPEED

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