MA4T636500 datasheet, PDF - EEWORLD Datasheet

MA4T636500: DescriptionX BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size265KB，8 Pages; ManufacturerTE Connectivity; Websitehttp://www.te.com

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MA4T636500 Overview

X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
package instruction	UNCASED CHIP, S-XUUC-N6
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.065 A
Collector-based maximum capacity	0.7 pF
Collector-emitter maximum voltage	6 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
highest frequency band	X BAND
JESD-30 code	S-XUUC-N6
Number of components	1
Number of terminals	6
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	10000 MHz
Base Number Matches	1

	MA4T636500
Description	X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
package instruction	UNCASED CHIP, S-XUUC-N6
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.065 A
Collector-based maximum capacity	0.7 pF
Collector-emitter maximum voltage	6 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
highest frequency band	X BAND
JESD-30 code	S-XUUC-N6
Number of components	1
Number of terminals	6
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	10000 MHz
Base Number Matches	1

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