N1263DZ52KOO datasheet, PDF - EEWORLD Datasheet

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N1263DZ52KOO: DescriptionSilicon Controlled Rectifier, 4880A I(T)RMS, 5200V V(DRM), 5200V V(RRM), 1 Element, 101A325, 3 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size85KB，8 Pages; ManufacturerIXYS

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N1263DZ52KOO Overview

Silicon Controlled Rectifier, 4880A I(T)RMS, 5200V V(DRM), 5200V V(RRM), 1 Element, 101A325, 3 PIN

N1263DZ52KOO Parametric

Parameter Name	Attribute value
Maker	IXYS
package instruction	DISK BUTTON, O-CXDB-X3
Contacts	3
Reach Compliance Code	unknown
Configuration	SINGLE
Maximum DC gate trigger current	300 mA
JESD-30 code	O-CXDB-X3
Number of components	1
Number of terminals	3
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	4880 A
Off-state repetitive peak voltage	5200 V
Repeated peak reverse voltage	5200 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Trigger device type	SCR
Base Number Matches	1

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WESTCODE

Absolute maximum ratings

VOLTAGE RATINGS

DRM

DSM

RRM

RSM

Repetitive peak off-state voltage, (note 1).

Non-repetitive peak off-state voltage, (note 1).

Repetitive peak reverse voltage, (note 1).

Non-repetitive peak reverse voltage, (note 1).

Date : Dec-99

Rat Rep : 99T07

Issue 2

Converter thyristor

Type N1263xx43xxx to N1263xx52xxx

MAXIMUM

LIMITS

4300-5200

4400-5300

UNITS

RATINGS

T(AV)

T(RMS)

T(d.c.)

TSM

TSM2

di/dt

FGM

RGM

G(AV)

stg

MAXIMUM

LIMITS

2500

1750

1080

4880

4350

37.8x10

42.0x10

7.1x10

8.8x10

5.1x10

150

300

0.25

-40 to +125

-40 to +150

UNITS

A/µs

°C

Mean on-state current, Tsink=55°C, (note 2).

Mean on-state current. Tsink=85°C, (note 5).

Mean on-state current. Tsink=85°C, (note 3).

Nominal RMS on-state current, 25°C, (note 2).

D.C. on-state current, 25°C, (note 7).

Peak non-repetitive surge tp=10ms, V

=0.6V

RRM

, (note 4).

Peak non-repetitive surge tp=10ms, V

≤10V,

(note 4).

I t capacity for fusing tp=10ms, V

=0.6V

RRM

, (note 4).

I t capacity for fusing tp=10ms, V

≤10V,

(note 4).

t capacity for fusing tp=3ms, V

≤0.6V

RRM

, (note 4).

Critical rate of rise of on-state current (continuous), (note 6).

Critical rate of rise of on-state current (intermittent), (note 6).

Peak forward gate current.

Peak reverse gate voltage.

Mean forward gate power.

Peak forward gate power.

Non-trigger gate voltage, (Note 5).

Operating temperature range.

Storage temperature range.

Notes:-

1) De-rating factor of 0.13% per K is applicable for T

below 25°C.

2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.

3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, 125°C T

initial.

5) Rated V

DRM.

6) V

=67%V

DRM

, I

=5000A, I

=2A, t

=500ns.

7) Doubleside cooled.

Types N1263xx43xxx to N1263xx52xxx Rating Report 99T07

page 1 of 8

December, 1999

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