DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG2179TB
L, S-BAND SPDT SWITCH
DESCRIPTION
The
µ
PG2179TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which were developed
for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.5
to 5.3 V. This device can operate frequency from 0.05 to 3.0 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
mounting.
FEATURES
• Switch control voltage
• Low insertion loss
: V
cont (H)
= 2.5 to 5.3 V (3.0 V TYP.)
: V
cont (L)
=
−0.2
to +0.2 V (0 V TYP.)
: L
ins1
= 0.25 dB TYP. @ f = 0.05 to 1.0 GHz, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V
: L
ins2
= 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V
: L
ins3
= 0.35 dB TYP. @ f = 2.0 to 2.5 GHz, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V
: L
ins4
= 0.40 dB TYP. @ f = 2.5 to 3.0 GHz, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V
• High isolation
• Handling power
: ISL1 = 27 dB TYP. @ f = 0.05 to 2.0 GHz, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V
: ISL2 = 24 dB TYP. @ f = 2.0 to 3.0 GHz, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V
: P
in (0.1 dB)
= +29.0 dBm TYP. @ f = 0.5 to 3.0 GHz, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V
: P
in (1 dB)
= +32.0 dBm TYP. @ f = 0.5 to 3.0 GHz, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V
• High-density surface mounting : 6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and Bluetooth
TM
etc.
ORDERING INFORMATION
Part Number
Package
6-pin super minimold
Marking
G4C
Supplying Form
•
Embossed tape 8 mm wide
•
Pin 4, 5, 6 face the perforation side of the tape
•
Qty 3 kpcs/reel
µ
PG2179TB-E4
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2179TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10454EJ02V0DS (2nd edition)
Date Published March 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2003, 2004
µ
PG2179TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
1
6 1
(Top View)
6 6
(Bottom View)
1
Pin No.
1
2
3
4
Pin Name
OUTPUT1
GND
OUTPUT2
V
cont2
INPUT
V
cont1
G4C
V
cont1
Low
High
Low
Parameter
Parameter
2
5 2
5 5
2
3
4 3
4 4
3
5
6
TRUTH TABLE
V
cont2
High
INPUT−OUTPUT1
ON
OFF
INPUT−OUTPUT2
OFF
ON
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Symbol
V
cont
P
in
T
A
T
stg
Ratings
6.0
Note
Unit
V
dBm
°C
°C
Switch Control Voltage
Input Power
Operating Ambient Temperature
Storage Temperature
+33
−45
to +85
−55
to +150
Note
V
cont1
−
V
cont2
≤
6.0 V
RECOMMENDED OPERATING RANGE (T
A
= +25°C, unless otherwise specified)
Symbol
V
cont (H)
V
cont (L)
MIN.
2.5
−0.2
TYP.
3.0
0
MAX.
5.3
0.2
Unit
V
V
Switch Control Voltage (H)
Switch Control Voltage (L)
2
Data Sheet PG10454EJ02V0DS
µ
PG2179TB
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
Insertion Loss 1
Insertion Loss 2
Insertion Loss 3
Insertion Loss 4
Isolation 1
Isolation 2
Input Return Loss
Output Return Loss
0.1 dB Loss Compression
Input Power
Note2
Symbol
L
ins1
L
ins2
L
ins3
L
ins4
ISL1
ISL2
RL
in
RL
out
P
in (0.1 dB)
Test Conditions
f = 0.05 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 3.0 GHz
f = 0.05 to 2.0 GHz
f = 2.0 to 3.0 GHz
f = 0.05 to 3.0 GHz
f = 0.05 to 3.0 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 0.5 to 3.0 GHz
Note1
Note1
Note1
MIN.
−
−
−
−
23
20
15
15
+25.5
+25.5
−
−
−
TYP.
0.25
0.30
0.35
0.40
27
24
20
20
+29.0
+29.0
+29.0
4
50
MAX.
0.45
0.50
0.55
0.60
−
−
−
−
−
−
−
20
500
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
Note1
Switch Control Current
Switch Control Speed
I
cont
t
sw
No signal
50%CTL to 90/10%RF
µ
A
ns
Note1.
DC cut capacitor = 1 000 pF at f = 0.05 to 0.5 GHz.
2.
P
in (0.1 dB)
is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
STANDARD CHARACTERISTICS FOR REFERENCE
(T
A
= +25°C, V
cont (H)
= 3.0 V, V
cont (L)
= 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
1 dB Loss Compression
Input Power
Note
Symbol
P
in (1 dB)
Test Conditions
f = 0.5 to 3.0 GHz
MIN.
−
TYP.
+32.0
MAX.
−
Unit
dBm
3rd Order Intermodulation Intercept
Point
IIP
3
f = 0.5 to 3.0 GHz, 2 tone,
5 MHz spicing
−
+60.0
−
dBm
Note
P
in (1 dB)
is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution When using this IC, a DC coupling capacitor must be externally attached to the I/O pins.
A DC coupling capacitor with a capacitance of 100 pF or lower is recommended when using a
frequency of 0.5 GHz or higher, and one with a capacitance of 1,000 pF is recommended when
using a frequency of less than 0.5 GHz. The ideal value changes depending on the frequency and
bandwidth used, so select a capacitor with a suitable capacitance according to the usage
conditions.
Data Sheet PG10454EJ02V0DS
3
GD32 MCU
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