Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Maker | KODENSHI |
package instruction | , |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 28 W |
surface mount | YES |
Base Number Matches | 1 |
STK0160D | |
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Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Maker | KODENSHI |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 28 W |
surface mount | YES |
Base Number Matches | 1 |