6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
| Parameter Name | Attribute value |
| Maker | Renesas Electronics Corporation |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 6 A |
| Maximum drain-source on-resistance | 0.35 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 18 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| FSL23A0D3 | FSL23A0R4 | FSL23A0D1 | FSL23A0R3 | FSL23A0R1 | |
|---|---|---|---|---|---|
| Description | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| Maker | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V | 200 V | 200 V | 200 V | 200 V |
| Maximum drain current (ID) | 6 A | 6 A | 6 A | 6 A | 6 A |
| Maximum drain-source on-resistance | 0.35 Ω | 0.35 Ω | 0.35 Ω | 0.35 Ω | 0.35 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF | TO-205AF | TO-205AF | TO-205AF | TO-205AF |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 18 A | 18 A | 18 A | 18 A | 18 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
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