Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),550A I(T),FBASE-F-BD61
Parameter Name | Attribute value |
Maker | IXYS |
package instruction | , |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Nominal circuit commutation break time | 12 µs |
Critical rise rate of minimum off-state voltage | 20 V/us |
Maximum DC gate trigger current | 300 mA |
Maximum DC gate trigger voltage | 3 V |
Maximum holding current | 1000 mA |
Maximum leakage current | 75 mA |
On-state non-repetitive peak current | 12000 A |
Maximum on-state current | 550000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Off-state repetitive peak voltage | 600 V |
surface mount | NO |
Trigger device type | SCR |
Base Number Matches | 1 |