ZVN2110E datasheet, PDF - EEWORLD Datasheet

ZVN2110E: DescriptionPower Field-Effect Transistor, 0.32A I(D), 100V, 4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14; CategoryDiscrete semiconductor The transistor; File Size253KB，8 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZVN2110E Overview

Power Field-Effect Transistor, 0.32A I(D), 100V, 4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	IN-LINE, R-PDIP-T14
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	0.32 A
Maximum drain current (ID)	0.32 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T14
JESD-609 code	e0
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.85 W
Maximum pulsed drain current (IDM)	3 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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