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W3E64M72S-333BM

Description
Synchronous DRAM, 64MX72, 0.7ns, CMOS, PBGA219, 25 X 32 MM, PLASTIC, BGA-219
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

W3E64M72S-333BM Overview

Synchronous DRAM, 64MX72, 0.7ns, CMOS, PBGA219, 25 X 32 MM, PLASTIC, BGA-219

W3E64M72S-333BM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid2118988062
package instructionBGA,
Reach Compliance Codeunknown
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B219
memory density4831838208 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width72
Number of functions1
Number of ports1
Number of terminals219
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize64MX72
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height3.57 mm
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED

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