AT68166F-YM15-MQ datasheet, PDF

Datasheet> All Categories > storage> storage> AT68166F-YM15-MQ

AT68166F-YM15-MQ: DescriptionStandard SRAM, 512KX32, 15ns, CMOS, CQFP68; Categorystorage storage; File Size339KB，15 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

Download Datasheet Parametric Compare View All

AT68166F-YM15-MQ Overview

Standard SRAM, 512KX32, 15ns, CMOS, CQFP68

AT68166F-YM15-MQ Parametric

Parameter Name	Attribute value
package instruction	GQFF,
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	15 ns
Other features	IT CAN BE USED AS 2BANK OF 512K X 16 OR 4BANK OF 512K X 8 ALSO
JESD-30 code	S-CQFP-F68
length	24.13 mm
memory density	16777216 bit
Memory IC Type	STANDARD SRAM
memory width	32
Number of functions	1
Number of terminals	68
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX32
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	GQFF
Package shape	SQUARE
Package form	FLATPACK, GUARD RING
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class Q
Maximum seat height	4.7 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	QUAD
total dose	300k Rad(Si) V
width	24.13 mm
Base Number Matches	1

Preview

Download Datasheet

View All

Features

•

Can be used as either 1 off 512k x 32, 2 off 512k x 16 or 4 off 512k x 8

•

Operating Voltage: 3.3V

•

Access Time:

•

– 15 ns for 3.3V biased only (AT68166F)

– 25 ns & 17 ns for 5V Tolerant (AT68166FT)

Very Low Power Consumption

– Active: 650 mW per byte (Max) @ 15 ns - 540 mW per byte (Max) @ 25ns

– Standby: 15 mW (Typ)

Wide Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Die manufactured on Atmel 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

950 Mils Wide MQFPT 68 Package

ESD Better than 4000V for the AT68166F

ESD Better than 2000V for the AT68166FT

Quality Grades: ESCC, QML-Q or V

Rad Hard

16 MegaBit

SRAM Multi

Chip Module

AT68166F

AT68166FT

Advanced

Information

Description

The AT68166F/FT is a Radiation Hardened hermetic Multi Chip Modules (MCM), inte-

grating very low-power CMOS asynchronous static RAM which can be organized as 1

bank off 512K x 32, 2 banks off 512Kx16, or 4 banks off 512Kx8. It is built with 4 dies

of the AT60142F/FT SRAM keeping all their basic characteristics: power consump-

tion, stand by current, data retention, Multiple Bit Upset (MBU) immune, etc…

This MCM takes full benefit of Atmel expertise in hermetic ceramic package assembly.

The small size of the AT60142F/FT die allows for assembling it in a 68 pins quad flat

pack which results into a package footprint compatible with products from other

sources. Furthermore, all die being assembled on the same package side makes

power dissipation through the PCB much easier and more efficient.

This MCM brings the solution to applications where fast computing is as mandatory as

low power consumption and higher integration density, saving 75% of the PCB area

used when using the individually package 4MB SRAM.

The F version is biased at 3.3V and is not 5V tolerant. It is available in 15 ns

specification.

The FT version is a variant allowing for 5V tolerance. It is available in 25 ns and 17 ns

specification.

The AT68166F/FT will be processed according to the test methods of the latest revi-

sion of the MIL PRF-38535 or the ESCC 9000.

7531B–AERO–02/06

AT68166F-YM15-MQ Related Products

	AT68166F-YM15-MQ
Description	Standard SRAM, 512KX32, 15ns, CMOS, CQFP68
package instruction	GQFF,
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	15 ns
Other features	IT CAN BE USED AS 2BANK OF 512K X 16 OR 4BANK OF 512K X 8 ALSO
JESD-30 code	S-CQFP-F68
length	24.13 mm
memory density	16777216 bit
Memory IC Type	STANDARD SRAM
memory width	32
Number of functions	1
Number of terminals	68
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX32
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	GQFF
Package shape	SQUARE
Package form	FLATPACK, GUARD RING
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class Q
Maximum seat height	4.7 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	QUAD
total dose	300k Rad(Si) V
width	24.13 mm
Base Number Matches	1

Recommended Resources

Pulse signal generating circuit c

Temperature range control circuit

Timer circuit diagram of relay closing in time flow

Wattmeter circuit for measuring low frequency amplifier output power

Power protection circuit

Touch switch 2

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components