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DD540N22K-A

Description
Rectifier Diode, 1 Phase, 2 Element, 573A, 2200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size168KB,9 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric Compare View All

DD540N22K-A Overview

Rectifier Diode, 1 Phase, 2 Element, 573A, 2200V V(RRM), Silicon,

DD540N22K-A Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
applicationPOWER
Shell connectionISOLATED
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current13000 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current573 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Base Number Matches1
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD540N
DD540N
Elektrische Eigenschaften / Electrical properties
Kenndaten
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Elektrische Eigenschaften
T
Thermische Eigenschaften
vj
= -40°C... T
vj max
V
RRM
V
RSM
I
FRMSM
2000
2400
2100
2500
2200 V
2600 V
2300 V
2700 V
900 A
540 A
573 A
16.500 A
14.000 A
1.360.000 A²s
980.000 A²s
T
vj
= +25°C... T
vj max
T
C
= 100°C
T
C
=
95°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FAVM
I
FSM
I²t
T
vj
= T
vj max
, i
F
= 1700 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
, v
R
= V
RRM
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
v
F
V
(TO)
r
T
i
R
V
ISOL
max.
1,48 V
0,78 V
0,31 mΩ
max.
40 mA
3,6 kV
3,0 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module,
Θ
= 180° sin R
thJC
pro Zweig / per arm,
Θ
= 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
pro Modul / per Module
pro Zweig / per arm
R
thCH
T
vj max
T
c op
T
stg
max.
max.
max.
max.
max.
max.
0,0390
0,0780
0,0373
0,0745
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
prepared by: C. Drilling
approved by: M. Leifeld
date of publication:
revision:
0,01 °C/W
0,02 °C/W
150 °C
- 40...+150 °C
- 40...+150 °C
06.05.03
1
BIP AC / 95-04-21, K.-A. Rüther
A109/95
Seite/page
1/9

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DD540N22K-A DD540N20K-K DD540N20K-A DD540N22K-K DD540N24K-K DD540N24K-A
Description Rectifier Diode, 1 Phase, 2 Element, 573A, 2200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 2 Element, 573A, 2000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 2 Element, 573A, 2000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 2 Element, 573A, 2200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 2 Element, 573A, 2400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 2 Element, 573A, 2400V V(RRM), Silicon,
Reach Compliance Code unknown unknown unknown unknown unknown unknown
application POWER POWER POWER POWER POWER POWER
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3
Maximum non-repetitive peak forward current 13000 A 13000 A 13000 A 13000 A 13000 A 13000 A
Number of components 2 2 2 2 2 2
Phase 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 573 A 573 A 573 A 573 A 573 A 573 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 2200 V 2000 V 2000 V 2200 V 2400 V 2400 V
surface mount NO NO NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER
Base Number Matches 1 1 1 1 1 -
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