NM93C06LEMT8 datasheet, PDF - EEWORLD Datasheet

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NM93C06LEMT8: DescriptionEEPROM, 16X16, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8; Categorystorage storage; File Size273KB，13 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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NM93C06LEMT8 Overview

EEPROM, 16X16, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8

NM93C06LEMT8 Parametric

Parameter Name	Attribute value
package instruction	TSSOP,
Reach Compliance Code	unknown
Other features	40 YEARS OF DATA RETENTION
Maximum clock frequency (fCLK)	0.25 MHz
Data retention time - minimum	40
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
length	4.4 mm
memory density	256 bit
Memory IC Type	EEPROM
memory width	16
Number of functions	1
Number of terminals	8
word count	16 words
character code	16
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16X16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	SERIAL
Maximum seat height	1.2 mm
Serial bus type	MICROWIRE
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
width	3 mm
Maximum write cycle time (tWC)	15 ms
Base Number Matches	1

NM93C06LEMT8 Related Products

	NM93C06LEMT8	NM93C06LEN	NM93C06LN	NM93C06LM8	NM93C06LZMT8	NM93C06N
Description	EEPROM, 16X16, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8	EEPROM, 16X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8	EEPROM, 16X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8	EEPROM, 16X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8	EEPROM, 16X16, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8	EEPROM, 16X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8
package instruction	TSSOP,	DIP,	DIP,	SOP,	TSSOP,	DIP,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Other features	40 YEARS OF DATA RETENTION	40 YEARS OF DATA RETENTION	40 YEARS OF DATA RETENTION	40 YEARS OF DATA RETENTION	40 YEARS OF DATA RETENTION	40 YEARS OF DATA RETENTION
Maximum clock frequency (fCLK)	0.25 MHz	0.25 MHz	0.25 MHz	0.25 MHz	0.25 MHz	1 MHz
Data retention time - minimum	40	40	40	40	40	40
JESD-30 code	R-PDSO-G8	R-PDIP-T8	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8	R-PDIP-T8
length	4.4 mm	9.817 mm	9.817 mm	4.9 mm	4.4 mm	9.817 mm
memory density	256 bit	256 bit	256 bit	256 bit	256 bit	256 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1
Number of terminals	8	8	8	8	8	8
word count	16 words	16 words	16 words	16 words	16 words	16 words
character code	16	16	16	16	16	16
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	70 °C	70 °C	70 °C	70 °C
organize	16X16	16X16	16X16	16X16	16X16	16X16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	DIP	DIP	SOP	TSSOP	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	IN-LINE
Parallel/Serial	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
Maximum seat height	1.2 mm	5.08 mm	5.08 mm	1.75 mm	1.2 mm	5.08 mm
Serial bus type	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	4.5 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	5 V
surface mount	YES	NO	NO	YES	YES	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE
Terminal pitch	0.65 mm	2.54 mm	2.54 mm	1.27 mm	0.65 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	3 mm	7.62 mm	7.62 mm	3.9 mm	3 mm	7.62 mm
Maximum write cycle time (tWC)	15 ms	15 ms	15 ms	15 ms	15 ms	10 ms
Base Number Matches	1	1	1	1	-	-

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