Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 1 A |
Collector-emitter maximum voltage | 250 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 10 |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | NPN |
Maximum power consumption environment | 15 W |
Maximum power dissipation(Abs) | 15 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 10 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 10 MHz |
VCEsat-Max | 1 V |
Base Number Matches | 1 |
CJD47BKLEADFREE | CJD47BK | CJD50BKLEADFREE | CJD50TR13 | CJD50TR13LEADFREE | CJD50BK | CJD47TR13LEADFREE | CJD47TR13 | |
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Description | Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, |
Is it lead-free? | Lead free | Contains lead | Lead free | Contains lead | Lead free | Contains lead | Lead free | Contains lead |
Is it Rohs certified? | conform to | incompatible | conform to | incompatible | conform to | incompatible | conform to | incompatible |
Reach Compliance Code | compliant | not_compliant | compliant | not_compliant | compliant | not_compliant | compliant | not_compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
Collector-emitter maximum voltage | 250 V | 250 V | 400 V | 400 V | 400 V | 400 V | 250 V | 250 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 |
JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
JESD-609 code | e3 | e0 | e3 | e0 | e3 | e0 | e3 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
Maximum power consumption environment | 15 W | 15 W | 15 W | 15 W | 15 W | 15 W | 15 W | 15 W |
Maximum power dissipation(Abs) | 15 W | 15 W | 15 W | 15 W | 15 W | 15 W | 15 W | 15 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES |
Terminal surface | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | 10 | NOT SPECIFIED | 10 | NOT SPECIFIED | 10 | NOT SPECIFIED | 10 | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz |
VCEsat-Max | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V |
Maker | - | - | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |