CMXT3906BK datasheet, PDF - EEWORLD Datasheet

CMXT3906BK: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6; CategoryDiscrete semiconductor The transistor; File Size3MB，2 Pages; ManufacturerCentral Semiconductor

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CMXT3906BK Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	300 ns
Maximum opening time (tons)	70 ns
Base Number Matches	1

	CMXT3906BK	CMXT3906TR
Description	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6
Is it Rohs certified?	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Contacts	6	6
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	100	100
JESD-30 code	R-PDSO-G6	R-PDSO-G6
JESD-609 code	e0	e0
Number of components	2	2
Number of terminals	6	6
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz
Maximum off time (toff)	300 ns	300 ns
Maximum opening time (tons)	70 ns	70 ns
Base Number Matches	1	1

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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