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25AA640AX-I/SN

Description
8K X 8 SPI BUS SERIAL EEPROM, PDSO8
Categorystorage    storage   
File Size994KB,36 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric View All

25AA640AX-I/SN Overview

8K X 8 SPI BUS SERIAL EEPROM, PDSO8

25AA640AX-I/SN Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instructionSOP,
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Maximum clock frequency (fCLK)10 MHz
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.9 mm
memory density65536 bi
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count8192 words
character code8000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeSPI
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width3.9 mm
Maximum write cycle time (tWC)5 ms
Base Number Matches1
25AA640A/25LC640A
64K SPI Bus Serial EEPROM
Device Selection Table
Part Number
25LC640A
25AA640A
V
CC
Range
2.5-5.5V
1.8-5.5V
Page Size
32 Byte
32 Byte
Temp. Ranges
I,E
I, E
Packages
P, SN, ST, MS, MF, MNY
P, SN, ST, MS, MF, MNY
Features:
• Max. Clock 10 MHz
• Low-Power CMOS Technology:
- Max. Write Current: 5 mA at 5.5V, 10 MHz
- Read Current: 5 mA at 5.5V, 10 MHz
- Standby Current: 1
A
at 5.5V
• 8192 x 8-bit Organization
• 32 Byte Page
• Self-Timed Erase and Write Cycles (5 ms max.)
• Block Write Protection:
- Protect none, 1/4, 1/2 or all of array
• Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential Read
• High Reliability:
- Endurance: 1,000,000 erase/write cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• Temperature Ranges Supported:
- Industrial (I):
-40C to +85C
- Automotive (E):
-40°C to +125°C
Description:
The Microchip Technology Inc. 25AA640A/25LC640A
(25XX640A
*
) are 64 kbit Serial Electrically Erasable
PROMs. The memory is accessed via a simple Serial
Peripheral Interface (SPI) compatible serial bus. The
bus signals required are a clock input (SCK) plus
separate data in (SI) and data out (SO) lines. Access to
the device is controlled through a Chip Select (CS)
input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25XX640A is available in standard packages
including 8-lead PDIP and SOIC, and advanced
packaging including 8-lead MSOP, 8-lead TSSOP, DFN
and TDFN.
Package Types (not to scale)
TSSOP/MSOP
(ST, MS)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIC
(P, SN)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
X-Rotated TSSOP
(X/ST)
HOLD
V
CC
CS
SO
1
2
3
4
8
7
6
5
SCK
SI
V
SS
WP
DFN/TDFN
(MF/MNY)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
* 25XX640A is used in this document as a generic part number
for the 25AA640A, 25LC640A devices.
2003-2013 Microchip Technology Inc.
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