Power Field-Effect Transistor, 21A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| package instruction | FLANGE MOUNT, R-MSFM-P3 |
| Reach Compliance Code | unknown |
| Other features | CUSTOM BENT LEAD OPTIONS ARE AVAILABLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain current (ID) | 21 A |
| Maximum drain-source on-resistance | 0.27 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-259 |
| JESD-30 code | R-MSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 250 W |
| Maximum pulsed drain current (IDM) | 84 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 228 ns |
| Maximum opening time (tons) | 155 ns |
| Base Number Matches | 1 |
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