NAND512W3A1CZA6F datasheet, PDF

NAND512W3A1CZA6F: DescriptionFlash, 64MX8, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63; Categorystorage storage; File Size150KB，5 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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NAND512W3A1CZA6F Overview

Flash, 64MX8, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

Parameter Name	Attribute value
Parts packaging code	BGA
package instruction	8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
Contacts	63
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	12000 ns
JESD-30 code	R-PBGA-B63
JESD-609 code	e1
memory density	536870912 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	63
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64MX8
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
type	NAND TYPE
Base Number Matches	1

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