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30KP120A

Description
30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size21KB,3 Pages
ManufacturerMDE Semiconductor
Websitehttp://www.mdesemiconductor.com
Environmental Compliance
Download Datasheet Parametric View All

30KP120A Overview

30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

30KP120A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMDE Semiconductor
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, PRSM-MIN, UL RECOGNIZED
Minimum breakdown voltage134 V
Breakdown voltage nominal value134 V
Shell connectionISOLATED
Maximum clamping voltage194.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Maximum repetitive peak reverse voltage120 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
30KP SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE-30.0 TO 400 Volts
30000 Watt Peak Pulse Power
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 30000W Peak Pulse Power
capability on 10/1000 µs waveform
• Excellent clamping capability
• Repetition rate (duty cycle):0.05%
• Low incremental surge resistance
• Fast response time: typically less
than 1.0 ps from 0 volts to BV
• Typical Id less than 1µA above 10V
• High temperature soldering guaranteed:
265°C/10 seconds/.375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
P-600
1.0(25.4) MIN
.360(9.1)
.340(8.6)
DIA
.360(9.1)
.340(8.6)
.052(1.3)
.048(1.2)
DIA
1.0(25.4) MIN
MECHANICAL DATA
Case:Molded plastic over glass passivated junction
Terminals: Plated Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.07 ounce, 2.1 gram
Dimensions in inches (milimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 30KP30 thru types 30KP400
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
Peak Pulse Power Dissipation on 10/1000 µs
waveform (NOTE 1)
Peak Pulse Current of on 10-1000 µs waveform
(NOTE 1)
Steady State Power Dissipation at Tl=75 °C
Lead Lengths.375", (9.5mm)(NOTE 2)
SYMBOL
P
PPM
I
PPM
P
M
(AV)
VALUE
Minimum 30000
SEE TABLE 1
8.0
UNITS
Watts
Amps
Watts
Peak Forward Surge Current, 8.3ms Sine-Wave
I
FSM
400.0
Superimposed on Rated Load, (JEDEC Method)
(NOTE 3)
Operatings and Storage Temperature Range
T
J
, T
STG
-55 to +175
NOTES:
1.Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2.Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.
3.8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum
Certified RoHS Compliant
UL File # E223026
Amps
°C

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