LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
V
DS
= 20V
R
DS(ON),
Vgs@4.5V, Ids@2.8A = 60m
Ω
R
DS(ON),
Vgs@2.5V, Ids@2.0A = 115m
Ω
Features
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM
we declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LN2302LT1G
S-LN2302LT1G
3
1
2
SOT– 23 (TO–236AB)
3 D
▼
H igh Density Cell Design For U ltra Low O n - Resistance
Improved Shoot-Through FO M
Ordering Information
Device
LN2302LT1G
S-LN2302LT1G
LN2302LT3G
S-LN2302LT3G
Marking
N02
N02
Shipping
3000/Tape & Reel
G
1
2
S
10,000/Tape & Reel
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
(T
A
= 25
o
C unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
TA = 25
o
C
TA = 75 C
o
Limit
20
±8
2.3
8
0.9
0.57
Unit
V
A
Maximum Power Dissipation
P
D
T
J
, T
stg
R
qJC
2)
W
o
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
-55 to 150
o
C
C/W
R
qJA
145
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in
2
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Rev .A 1/5
LESHAN RADIO COMPANY, LTD.
LN2302LT1G , S-LN2302LT1G
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Forward Transconductance
Dynamic
3)
Symbol
BV
DSS
R
DS(on)
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Rg
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
I
S
V
SD
Test Condition
Min
Typ
Max
Unit
V
mΩ
V
uA
nA
Ω
S
V
GS
= 0V, I
D
= 250uA
V
GS
= 4.5V, I
D
= 2.8A
V
GS
= 2.5V, I
D
= 2.0A
V
DS
=V
GS
, I
D
= 250uA
V
DS
= 9.6V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
20
-
40
50
-
60
115
1.20
-1
±100
0.60
0.95
V
DS
= 5V, I
D
= 4.0A
6.5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Note:
Pulse test: pulse width <= 300us, duty cycle<= 2%
V
DS
= 6V, I
D
= 2.8A
V
GS
= 4.5V
3.69
0.70
1.06
6.16
nC
V
DD
= 6V, R
L
= 6Ω
Ι
D
= 1Α,
V
GEN
= 4.5V
R
G
= 6Ω
7.56
16.61
4.07
427.12
ns
V
DS
= 6V, V
GS
= 0V
f = 1.0 MHz
80.56
57.00
pF
1.6
I
S
= -1.6A, V
GS
= 0V
1.2
A
V
Rev .A 2/5
LESHAN RADIO COMPANY, LTD.
LN2302LT1G , S-LN2302LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
16
20
Id , DRA IN CU RR EN T(A )
Vds=5V
25°C
Id DR AIN C URR EN T( A)
14
12
10
8
6
4
2
0
0
18
16
14
12
10
8
6
4
2
0
0
25°C
Vgs=2.5V
Vgs=2V
Vgs=1.5V
0.5
1
1.5
2
Vg s, G ATE -T O- SOU RC E VOL TA GE (V)
2.5
0.5
1
1.5
2
2.5
3
3.5
4
Vd s, DR AIN -T O- SOU RC E V OL TA GE( V)
4.5
5
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
500
450
400
350
300
250
200
150
100
50
0
0
1
2
rDS(on)-On-Resistance(mR)
350
300
250
200
150
ID=3.5A
100
50
0
0
1
2
3
4
5
6
7
8
Vgs-Gate-to-Source Voltage(V)
VGS=1.8V
VGS=2.5V
VGS=4.5V
3
4
5
ID-Drain Current(A)
6
7
8
Figure 3. On–Resistance versus Drain Current
Rds-On-Resistance(mR)
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .A 3/5
LESHAN RADIO COMPANY, LTD.
LN2302LT1G , S-LN2302LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
12
10
8
Vgs(V)
6
4
2
0
0
2
4
6
Qgs(nC)
8
10
12
Capacita nce
700
600
500
400
300
200
100
0
0
1
2
3
Vd s
4
5
6
Coss
Crss
Ciss
Figure 5. Gate Charge
Figure 6. Capacitance
70
60
Rds(on)(mR)
Vgs(th)(V)
1.2
1
ID=250uA
50
40
30
20
10
0
-50
0
50
Temp(ºC)
100
VGS=4.5V ID=2A
0.8
0.6
0.4
0.2
0
-50
150
0
50
Temp(ºC)
100
150
Figure 7. On-Resistance Vs.Junction Temperature
Figure 8. Vth Vs.Junction Temperature
Rev .A 4/5
LESHAN RADIO COMPANY, LTD.
LN2302LT1G , S-LN2302LT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0830
0.0177
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
2.10
0.45
1.02
2.64
0.60
C
D
H
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .A 5/5
京公网安备 11010802033920号
EEWORLD
