BY299Z datasheet, PDF - EEWORLD Datasheet

BY299Z: DescriptionRectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-27,; CategoryDiscrete semiconductor diode; File Size262KB，2 Pages; ManufacturerGalaxy Microelectronics; Environmental Compliance

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BY299Z Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-27,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Microelectronics
package instruction	O-PALF-W2
Reach Compliance Code	unknown
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	DO-27
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	70 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.15 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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