|
T459N2000TOC |
T459N2200TOC |
T459N2000TOF |
T459N2400TOF |
Description |
Silicon Controlled Rectifier, 459000mA I(T), 2000V V(DRM), |
Silicon Controlled Rectifier, 459000mA I(T), 2200V V(DRM), |
Silicon Controlled Rectifier, 459000mA I(T), 2000V V(DRM), |
Silicon Controlled Rectifier, 459000mA I(T), 2400V V(DRM), |
Maker |
Vishay Telefunken (Vishay) |
Vishay Telefunken (Vishay) |
Vishay Telefunken (Vishay) |
Vishay Telefunken (Vishay) |
Reach Compliance Code |
unknown |
unknown |
unknown |
unknown |
Nominal circuit commutation break time |
300 µs |
300 µs |
300 µs |
300 µs |
Critical rise rate of minimum off-state voltage |
500 V/us |
500 V/us |
1000 V/us |
1000 V/us |
Maximum DC gate trigger current |
250 mA |
250 mA |
250 mA |
250 mA |
Maximum DC gate trigger voltage |
1.5 V |
1.5 V |
1.5 V |
1.5 V |
Maximum holding current |
300 mA |
300 mA |
300 mA |
300 mA |
Maximum leakage current |
80 mA |
80 mA |
80 mA |
80 mA |
On-state non-repetitive peak current |
6800 A |
6800 A |
6800 A |
6800 A |
Maximum on-state voltage |
2.6 V |
2.6 V |
2.6 V |
2.6 V |
Maximum on-state current |
459000 A |
459000 A |
459000 A |
459000 A |
Maximum operating temperature |
125 °C |
125 °C |
125 °C |
125 °C |
Minimum operating temperature |
-40 °C |
-40 °C |
-40 °C |
-40 °C |
Off-state repetitive peak voltage |
2000 V |
2200 V |
2000 V |
2400 V |
surface mount |
NO |
NO |
NO |
NO |
Trigger device type |
SCR |
SCR |
SCR |
SCR |
Base Number Matches |
1 |
1 |
1 |
1 |