EDB102S datasheet, PDF - EEWORLD Datasheet

EDB102S: DescriptionBridge Rectifier Diode, 1A, 100V V(RRM),; CategoryDiscrete semiconductor diode; File Size76KB，2 Pages; ManufacturerGalaxy Microelectronics; Environmental Compliance

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EDB102S Overview

Bridge Rectifier Diode, 1A, 100V V(RRM),

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	30 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Base Number Matches	1

	EDB102S	EDB103S	EDB104S
Description	Bridge Rectifier Diode, 1A, 100V V(RRM),	Bridge Rectifier Diode, 1A, 150V V(RRM),	Bridge Rectifier Diode, 1A, 200V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V
Maximum non-repetitive peak forward current	30 A	30 A	30 A
Number of components	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Maximum output current	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	100 V	150 V	200 V
Maximum reverse recovery time	0.05 µs	0.05 µs	0.05 µs
surface mount	YES	YES	YES
Base Number Matches	1	1	1

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