AS7M64P256-12C datasheet, PDF - EEWORLD Datasheet

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AS7M64P256-12C: DescriptionCache SRAM Module, 256KX8, 12ns, CMOS; Categorystorage storage; File Size88KB，2 Pages; ManufacturerALSC [Alliance Semiconductor Corporation]

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AS7M64P256-12C Overview

Cache SRAM Module, 256KX8, 12ns, CMOS

AS7M64P256-12C Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	DIMM, DIMM160
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	X-XXMA-X160
memory density	2097152 bit
Memory IC Type	CACHE SRAM MODULE
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	160
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM160
Package shape	UNSPECIFIED
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.016 A
Minimum standby current	4.5 V
Maximum slew rate	0.92 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	UNSPECIFIED
Terminal pitch	1.27 mm
Terminal location	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

AS7M64P256-12C Related Products

	AS7M64P256-12C	AS7M64P256-10C	AS7M64P1024-20C	AS7M64P1024-15C	AS7M64P512-20C	AS7M64P256-15C	AS7M64P256-20C
Description	Cache SRAM Module, 256KX8, 12ns, CMOS	Cache SRAM Module, 256KX8, 10ns, CMOS	Cache SRAM Module, 1MX8, 20ns, CMOS	Cache SRAM Module, 1MX8, 15ns, CMOS	Cache SRAM Module, 512KX8, 20ns, CMOS	Cache SRAM Module, 256KX8, 15ns, CMOS	Cache SRAM Module, 256KX8, 20ns, CMOS
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	DIMM, DIMM160	DIMM, DIMM160	DIMM, DIMM160	DIMM, DIMM160	DIMM, DIMM160	DIMM, DIMM160	DIMM, DIMM160
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	12 ns	10 ns	20 ns	15 ns	20 ns	15 ns	20 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	X-XXMA-X160	X-XXMA-X160	X-XXMA-X160	X-XXMA-X160	X-XXMA-X160	X-XXMA-X160	X-XXMA-X160
memory density	2097152 bit	2097152 bit	8388608 bit	8388608 bit	4194304 bit	2097152 bit	2097152 bit
Memory IC Type	CACHE SRAM MODULE	CACHE SRAM MODULE	CACHE SRAM MODULE	CACHE SRAM MODULE	CACHE SRAM MODULE	CACHE SRAM MODULE	CACHE SRAM MODULE
memory width	8	8	8	8	8	8	8
Humidity sensitivity level	1	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1	1
Number of terminals	160	160	160	160	160	160	160
word count	262144 words	262144 words	1048576 words	1048576 words	524288 words	262144 words	262144 words
character code	256000	256000	1000000	1000000	512000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX8	256KX8	1MX8	1MX8	512KX8	256KX8	256KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM160	DIMM160	DIMM160	DIMM160	DIMM160	DIMM160	DIMM160
Package shape	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225	225
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.016 A	0.016 A	0.08 A	0.08 A	0.04 A	0.016 A	0.016 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.92 mA	0.96 mA	0.88 mA	0.96 mA	0.84 mA	0.88 mA	0.8 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	-	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]

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