GM71C4800ALR-10 datasheet, PDF

GM71C4800ALR-10: DescriptionFast Page DRAM, 512KX8, 100ns, CMOS, PDSO28,; Categorystorage storage; File Size1MB，20 Pages; ManufacturerLG Semicon Co., Ltd.

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GM71C4800ALR-10 Overview

Fast Page DRAM, 512KX8, 100ns, CMOS, PDSO28,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
access mode	FAST PAGE
Maximum access time	100 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	FAST PAGE DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP28,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
reverse pinout	YES
self refresh	NO
Maximum standby current	0.0002 A
Maximum slew rate	0.09 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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