Power Field-Effect Transistor, 7A I(D), 40V, 0.023ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | LEAD FREE, SOP-8 |
| Reach Compliance Code | compliant |
| Avalanche Energy Efficiency Rating (Eas) | 4.9 mJ |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 40 V |
| Maximum drain current (ID) | 7 A |
| Maximum drain-source on-resistance | 0.023 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 |
| JESD-609 code | e3/e6 |
| Number of components | 2 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL AND P-CHANNEL |
| Maximum pulsed drain current (IDM) | 28 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | MATTE TIN/TIN BISMUTH |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| UPA2793GR-E2-AZ | UPA2793GR-E1-AZ | |
|---|---|---|
| Description | Power Field-Effect Transistor, 7A I(D), 40V, 0.023ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 | Power Field-Effect Transistor, 7A I(D), 40V, 0.023ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 |
| Is it Rohs certified? | conform to | conform to |
| package instruction | LEAD FREE, SOP-8 | LEAD FREE, SOP-8 |
| Reach Compliance Code | compliant | compliant |
| Avalanche Energy Efficiency Rating (Eas) | 4.9 mJ | 4.9 mJ |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 40 V | 40 V |
| Maximum drain current (ID) | 7 A | 7 A |
| Maximum drain-source on-resistance | 0.023 Ω | 0.023 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 | R-PDSO-G8 |
| JESD-609 code | e3/e6 | e3/e6 |
| Number of components | 2 | 2 |
| Number of terminals | 8 | 8 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 |
| Polarity/channel type | N-CHANNEL AND P-CHANNEL | N-CHANNEL AND P-CHANNEL |
| Maximum pulsed drain current (IDM) | 28 A | 28 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | MATTE TIN/TIN BISMUTH | MATTE TIN/TIN BISMUTH |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | 10 | 10 |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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