SIPS620 datasheet, PDF - EEWORLD Datasheet

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SIPS620: DescriptionSilicon Controlled Rectifier, 20A I(T)RMS, 20000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element; CategoryAnalog mixed-signal IC Trigger device; File Size343KB，4 Pages; ManufacturerHutson Industries

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SIPS620 Overview

Silicon Controlled Rectifier, 20A I(T)RMS, 20000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element

SIPS620 Parametric

Parameter Name	Attribute value
package instruction	POST/STUD MOUNT, O-MUPM-D3
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	25 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	50 mA
JESD-30 code	O-MUPM-D3
Maximum leakage current	1 mA
On-state non-repetitive peak current	200 A
Number of components	1
Number of terminals	3
Maximum on-state current	20000 A
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Certification status	Not Qualified
Maximum rms on-state current	20 A
Maximum repetitive peak off-state leakage current	1000 µA
Off-state repetitive peak voltage	600 V
Repeated peak reverse voltage	600 V
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Trigger device type	SCR
Base Number Matches	1

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MAXIMUM RATINGS

REPETITIVE PEAK OFF-STATE VOLTAGE AND

REPETITIVE PEAK REVERSE VOLTAGE GATE OPEN,

AND TJ = 110° C

RMS ON-STATE CURRENT AT TC = 80º C AND

CONDUCTION ANGLE OF 360º

PEAK SURGE (NON-REPETITIVE)

ON-STATE CURRENT, ONE-CYCLE,

AT 50HZ OR 60HZ

PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.

PEAK GATE - POWER DISSIPATION AT IGT < IGTM

AVERAGE GATE - POWER DISSIPATION

STORAGE TEMPERATURE RANGE

OPERATING TEMPERATURE RANGE, TJ

ELECTRICAL CHARACTERISTICS

AT SPECIFIED CASE TEMPERATURE

PEAK OFF - STATE CURRENT GATE OPEN,

TC = 110° C VDRM & VRRM = MAX. RATING

MAXIMUM ON - STATE VOLTAGE, (PEAK)

AT TC = 25° C AND IT = RATED AMPS

DC HOLDING CURRENT, GATE

OPEN AND TC = 25° C

CRITICAL RATE-OF-RISE OF OFF-

STATE VOLTAGE, GATE OPEN, TC = 110° C

DC GATE-TRIGGER CURRENT FOR ANODE

VOLTAGE = 12VDC, RL = 60

Ω

AND AT TC = 25° C

DC GATE - TRIGGER VOLTAGE FOR ANODE

VOLTAGE = 12VDC, RL = 60

Ω

AND AT TC = 25° C

GATE-CONTROLLED TURN-ON TIME FOR

TD + TR, IGT = 150 MA AND TC = 25° C

THERMAL RESISTANCE, JUNCTION-TO-CASE

PRESSFIT

STUD MOUNT

ISOLATED - STUD MOUNT

SYMBOL VDRM

VDRM &

VRRM

100

200

400

600

DEVICE NUMBERS UNITS

*S020

*S120

*S220

*S420

*S620

200

0.5

*S025

*S125

*S225

*S425

*S625

250

0.5

-40 to +150

-40 to +110

*S040

*S140

*S240

*S440

*S640

400

0.5

VOLT

T(RMS)

TSM

GTM

G(AV)

STG

OPER

AMP

WATT

°C

IDRM &

IRRM

VTM

IHO

CRITICAL

dv/dt

T gt

1.0

1.9

200

2.0

2.5

1.3

1.8

2.0

1.0

1.5

200

2.0

2.5

1.3

1.8

2.0

1.0

1.6

200

2.0

2.5

0.9

1.4

1.6

MAX.

VOLT

MAX.

V/µSEC.

MAX.

VOLT

MAX.

µSEC.

°C/WATT

TYP

J-C

SIP

PRESS FIT

PRESS FIT WITH STUD MOUNT

PRESS FIT WITH ISOLATED STUD MOUNT

WARNING

Isolated stud products should be handled with care. The ceramic used

in these thyristors contains BERYLLIUM OXIDE as a major ingredient.

DO NOT crush, grind or abrade these portions of the thyristors because

the dust resulting from such action may be HARZARDOUS if INHALED.

*Add prefix for package style desired.

SOLID STATE CONTROL DEVICES

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