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SG2011J

Description
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size509KB,7 Pages
ManufacturerLinfinity Microelectronics
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Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon,

SG2011J Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Other featuresLOGIC LEVEL COMPATIBLE
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage50 V
Configuration7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)900
JESD-30 codeR-CDIP-T16
JESD-609 codee0
Number of components7
Number of terminals16
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max1.9 V
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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