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UPA821TF-T1

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size187KB,6 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

UPA821TF-T1 Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN,

UPA821TF-T1 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage12 V
ConfigurationSEPARATE, 2 ELEMENTS
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)4500 MHz
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