MTB60N10E7L datasheet, PDF - EEWORLD Datasheet

MTB60N10E7L: DescriptionTRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,60A I(D),TO-263AB; CategoryDiscrete semiconductor The transistor; File Size568KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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MTB60N10E7L Overview

TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,60A I(D),TO-263AB

Parameter Name	Attribute value
Maker	NXP
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	60 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	242 W
surface mount	YES

	MTB60N10E7L	MTB60N10E7LT4
Description	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,60A I(D),TO-263AB	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,60A I(D),TO-263AB
Maker	NXP	NXP
Reach Compliance Code	unknown	unknown
Configuration	Single	Single
Maximum drain current (Abs) (ID)	60 A	60 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	242 W	242 W
surface mount	YES	YES

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