BFG197W/X datasheet, PDF - EEWORLD Datasheet

BFG197W/X: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size803KB，13 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BFG197W/X Overview

Transistor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Configuration	Single
Minimum DC current gain (hFE)	40
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	BFG197W/X	BFG197W/XR
Description	Transistor	Transistor
Is it Rohs certified?	incompatible	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown	unknown
Is Samacsys	N	N
Maximum collector current (IC)	0.1 A	0.1 A
Configuration	Single	Single
Minimum DC current gain (hFE)	40	40
JESD-609 code	e0	e0
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.5 W	0.5 W
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1

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