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ACT-S512K8N-020P4Q

Description
Cache SRAM, 512KX8, 20ns, CMOS, CDIP32, 1.600 X 0.600 INCH, 0.200 INCH HEIGHT, HERMETIC SEALED, CERAMIC, DIP-32
Categorystorage    storage   
File Size436KB,8 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

ACT-S512K8N-020P4Q Overview

Cache SRAM, 512KX8, 20ns, CMOS, CDIP32, 1.600 X 0.600 INCH, 0.200 INCH HEIGHT, HERMETIC SEALED, CERAMIC, DIP-32

ACT-S512K8N-020P4Q Parametric

Parameter NameAttribute value
MakerCobham Semiconductor Solutions
Parts packaging codeDIP
package instructionDIP,
Contacts32
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Is SamacsysN
Maximum access time20 ns
Other featuresTTL COMPATIBLE INPUTS/OUTPUTS
JESD-30 codeR-CDIP-T32
memory density4194304 bit
Memory IC TypeCACHE SRAM
memory width8
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-PRF-38534 Class Q
Maximum seat height5.715 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width15.24 mm
Base Number Matches1

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