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BAT86

Description
0.2 A, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size154KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BAT86 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

BAT86
SCHOTTKY BARRIER DIODE
Ultra high-speed switching, voltage clamping
protection circuits and blocking applications
Features
• Low forward voltage
• Hermetically-sealed leaded glass package
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 2.9
Min. 27.5
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Average Forward Current (V
RWM
= 25 V, T
amb
= 50
O
C)
Repetitive Peak Forward Current (at tp
1 s,
δ
0.5)
Non-repetitive Peak Forward Current (at tp
10 ms)
Operating Ambient Temperature Range
Junction Temperature
Storage Temperature Range
Thermal Resistance from Junction to Ambient
Symbol
V
R
I
F
I
F(AV)
I
FRM
I
FSM
T
amb
T
j
T
S
R
thja
Value
50
200
200
500
5
- 65 to + 125
125
- 65 to + 150
320
Unit
V
mA
mA
mA
A
O
C
C
C
O
O
K/W
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 0.1 mA
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 30 mA
at I
F
= 100 mA
Reverse Current
at V
R
= 40 V
Diode Capacitance
at V
R
= 1 V, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA, I
R
= 10 mA, R
L
= 100
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
C
d
t
rr
Max.
300
380
450
600
900
5
8
4
Unit
mV
mV
mV
mV
mV
µA
pF
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 25/06/2007

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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