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UPD44645184F5-E50-FQ1-A

Description
QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
Categorystorage    storage   
File Size380KB,40 Pages
ManufacturerNEC Electronics
Environmental Compliance
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UPD44645184F5-E50-FQ1-A Overview

QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165

UPD44645184F5-E50-FQ1-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNEC Electronics
package instruction15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
Reach Compliance Codecompliant
Maximum access time0.45 ns
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length17 mm
memory density75497472 bit
Memory IC TypeQDR SRAM
memory width18
Number of functions1
Number of terminals165
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.51 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
Base Number Matches1
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD44645084, 44645094, 44645184, 44645364
72M-BIT QDR
TM
II SRAM
4-WORD BURST OPERATION
Description
The
μ
PD44645084 is a 8,388,608-word by 8-bit, the
μ
PD44645094 is a 8,388,608-word by 9-bit, the
μ
PD44645184 is a
4,194,304-word by 18-bit and the
μ
PD44645364 is a 2,097,152-word by 36-bit synchronous quad data rate static RAM
fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44645084,
μ
PD44645094,
μ
PD44645184 and
μ
PD44645364 integrate unique synchronous peripheral
circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive
edge of K and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (15 x 17)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Four-tick burst for reduced address frequency
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.
User programmable impedance output
Fast clock cycle time : 3.7 ns (270 MHz) , 4.0 ns (250 MHz) , 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M18232EJ2V0DS00 (2nd edition)
Date Published February 2007 NS CP(N)
Printed in Japan
The mark <R> shows major revised points.
2006
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

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