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Datasheet> All Categories > Discrete semiconductor> The transistor> JANKCER2N5339
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JANKCER2N5339

Description
Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size550KB，5 Pages
ManufacturerVPT Inc
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JANKCER2N5339 Overview

Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN

JANKCER2N5339 Parametric

Parameter NameAttribute value
MakerVPT Inc
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
GuidelineMIL-19500; RH - 100K Rad(Si)
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Base Number Matches1

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NPN POWER SILICON TRANSISTOR
2N5339
FEATURES
•
JAN, JANTX, JANTXV, JANS, and JANSR 100K rad (si) per MIL-PRF-19500/560
•
TO-39 (TO-205AD) Package
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Collector
–
Emitter Breakdown Voltage
Collector
–
Emitter Cutoff Current
Collector
–
Base Cutoff Current
Emitter
–
Base Cutoff Current
ON CHARACTERISTIC
1
I
C
= 0.5 A dc, V
CE
= 2.0 V
Forward Current Transfer Ratio
I
C
= 2.0 A dc, V
CE
= 2.0 V
I
C
= 0.5 A dc, V
CE
= 2.0 V
Collector - Emitter Saturation Voltage
I
C
= 2.0 A dc, I
B
= 0.2 A dc
I
C
= 5.0 A dc, I
B
= 0.5 A dc
I
C
= 150 A dc, I
B
= 0.2 A dc
I
C
= 150 A dc, I
B
=0.5 A dc
V
CE(sat)
V dc
h
Fe
─
60
60
40
─
─
─
240
─
0.7
1.2
1.2
1.8
I
C
= 50 mA dc
V
CE
= 100 V dc
V
CE
= 90 V dc, V
BE
= 1.5 V dc
V
CB
= 100 V dc
V
EB
= 6.0 V dc
V
(BR)CEO
I
CEO
I
CEX
I
CBO
I
EBO
Vdc
µA dc
µA dc
µA dc
100
─
─
─
─
100
1.0
1.0
100
TEST CONDITION
SYMBOL
UNITS
MIN
MAX
Emitter - Base Saturation Voltage
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small Signal
Short-Circuit Forward Current Transfer Ratio
Output Capacitance
V
BE(sat)
V dc
I
C
= 0.5 A dc, V
CE
= 10.0 V dc, f = 10 MHz
|h
Fe
|
─
3
15
V
CB
= 10 V, I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
C
obo
pF
─
250
Input Capacitance
SAFE OPERATING AREA
DC Tests:
Test 1:
Test 2:
Test 3:
NOTES:
1.
Pulse Test:
Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
V
BE
= 2 Vdc, Ic = 0, 100 kHz ≤ f ≤ 1 MHz
C
ibo
pF
─
1000
T
C
= + 25 °C, I Cycle, t
≥
0.5 s
V
CE
= 2 V dc, I
C
= 5 A dc
V
CE
= 5 V dc, I
C
= 2 A dc
V
CE
= 90 V dc, I
C
= 55 mA dc
CONTACT INFORMATION:
P: 978-670-7300
• F: 978-670-7450 • E:
info@vptcomponents.com
•
W:
www.vptcomponents.com
Document No. - Rev V4
Page 1

JANKCER2N5339 Related Products

JANKCER2N5339 JANTX2N5339 2N5339 JAN2N5339 JANTXV2N5339 JANSR2N5339 JANS2N5339 JANKCE2N5339 JANHCER2N5339 JANHCE2N5339
Description Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
Maker VPT Inc VPT Inc VPT Inc VPT Inc VPT Inc VPT Inc VPT Inc VPT Inc VPT Inc VPT Inc
Reach Compliance Code unknown compliant unknown compliant compliant compliant compliant unknown unknown unknown
Base Number Matches 1 1 1 1 1 1 1 1 1 1

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