DATA SHEET
5P4SMA, 5P6SMA
5 A RESIN MOLD TYPE SCR
THYRISTORS
<R>
DESCRIPTION
The 5P4SMA and 5P6SMA are resin mold type SCRs with an
average on-state current 5 A (T
C
= 94°C), repetitive peak off-
state voltage 400 V and 600 V.
<R>
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 ±0.2
4.7 MAX.
φ
3.2 ±0.2
5 ±0.1
3.0 MAX.
17 ±0.2
2.8 ±0.2
<R>
FEATURES
•
Can be replaced with TO-220AB package
•
High allowable on-current when using a single unit
12 ±0.2
1
2 3
*
•
Motor speed control for household appliance
•
Temperature control for heater and constant temperature box
•
Constant voltage power source and battery charger
•
Automotive application such as regulator
•
Various solid state relay, etc.
0.8 ±0.1
2.54 TYP.
1.3 ±0.2
1.5 ±0.2
2.54 TYP.
5 ±0.2
APPLICATIONS
13.5 MIN.
0.5 ±0.1
2.5 ±0.1
1: Cathode
2: Anode
3: Gate
*
: T
C
test bench-mark
Standard weight: 2 g
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17163EJ4V0DS00 (4th edition)
Date Published October 2008 NS
Printed in Japan
1988
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
5P4SMA, 5P6SMA
MAXIMUM RATINGS
Parameter
Non-repetitive Peak Reverse Voltage
Non-repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Off-state Voltage
Average On-state Current
Effective On-state Current
Surge On-state Current
Symbol
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
5P4SMA
500
500
400
400
5P6SMA
700
700
600
600
Unit
V
V
V
V
A
A
A
Refer to
Figure 2.
Remarks
−
−
−
−
Refer to
Figure 11.
5 (T
C
= 94°C, single phase half wave,
θ
= 180°)
8
80 (50 Hz, sine half wave, 1 cycle)
88 (60 Hz, sine half wave, 1 cycle)
Fusing Current
Critical Rate Rise of On-state Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Forward Current
Peak Gate Reverse Voltage
Junction Temperature
Storage Temperature
∫
i
T2
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
28 (1 ms
≤
t
≤
10 ms)
50
5 (f
≥
50 Hz, Duty
≤
10%)
0.5
2 (f
≥
50 Hz, Duty
≤
10%)
10
−40
to +125
−55
to +150
As
A/
μ
s
W
W
A
V
°C
°C
2
−
−
Refer to
Figure 3.
−
−
−
−
ELECTRICAL CHARACTERISTICS (T
j
= 25°C)
Parameter
Repetitive Peak Reverse Current
Symbol
I
RRM
Conditions
V
RM
= V
RRM
T
j
= 25°C
T
j
= 125°C
Repetitive Peak Off-state Current
I
DRM
V
DM
= V
DRM
T
j
= 25°C
T
j
= 125°C
On-state Voltage
Gate Trigger Current
Gate Trigger Voltage
Gate Non-trigger Voltage
Holding Current
Critical Rate Rise of Off-state Voltage
Circuit Commuted Turn-off Time
V
TM
I
GT
V
GT
V
GD
I
H
dv/dt
t
q
I
TM
= 10 A
V
DM
= 6 V, R
L
= 100
Ω
V
DM
= 6 V, R
L
= 100
Ω
T
j
= 125°C, V
DM
=
1
V
DRM
2
MIN.
−
−
−
−
−
−
−
0.2
−
−
−
TYP.
−
−
−
−
−
−
−
−
6
40
50
MAX.
100
2
100
2
1.4
10
1.5
−
−
−
−
Unit
Remarks
−
−
−
−
Refer to
Figure 1.
Refer to
Figure 4.
μ
A
mA
μ
A
mA
V
mA
V
V
mA
V/
μ
s
−
−
−
−
V
DM
= 24 V, I
TM
= 10 A
T
j
= 125°C, V
DM
2
=
3
V
DRM
T
j
= 125°C, I
TM
= 5 A,
di
R
/dt = 15 A/
μ
s, V
R
≥
25 V,
2
V
DM
=
3
V
DRM
,
dV
D
/dt = 10 V/
μ
s
μ
s
Thermal Resistance
Note
R
th(j-c)
R
th(j-a)
Junction to case DC
Junction to ambient DC
−
−
−
−
4.2
60
°C/W
Refer to
Figure 13.
°C/W
2
Data Sheet D17163EJ4V0DS
5P4SMA, 5P6SMA
TYPICAL CHARACTERISTICS
Figure 1. i
T
vs.
½
T
CHARACTERISTIC
100
MAX.
T
j
= 25˚C
Figure 2. I
TSM
RATING
140
Initial T
j
= 125˚C
I
TSM
10 ms
20 ms
50
125˚C
I
TSM
- Surge On-state Current - A
120
100
80
60
40
20
0
50 Hz
i
T
- On-state Current - A
10
5.0
60 Hz
1.0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.4 4.0
1
5
10
50
100
½
T
- On-state Voltage - V
Cycles
Figure 3. V
FG
vs. I
FG
RATING
10
T
j
=
−40
to
+125˚C
Figure 4. V
GT
vs. I
GT
CHARACTERISTIC
5
V
DM
= 6 V
R
L
= 100
Ω
V
FG
- Gate Forward Voltage - V
V
GT
- Gate Trigger Voltage - V
8
4
6
P
GM
= 5 W
f = 50 Hz
Duty≤10%
3
T
j
=
−40˚C
4
P
G(AV)
= 0.5 W
2
25˚C
0˚C
2
1
0
0
1.0
2.0
0
0
5
10
15
20
25
30
I
FG
- Gate Forward Current - A
I
GT
- Gate Trigger Current - mA
Figure 5. I
GT
vs. T
A
CHARACTERISTIC
100
1.0
Figure 6. V
GT
vs. T
A
CHARACTERISTIC
I
GT
- Gate Trigger Current - mA
V
GT
- Gate Trigger Voltage - V
0.8
10
0.6
0.4
1
0.2
0.1
−40
−20
0
20
40
60
80
100
0
−40
−20
0
20
40
60
80
100
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
Data Sheet D17163EJ4V0DS
3
5P4SMA, 5P6SMA
Figure 7. i
GT
vs.
τ
CHARACTERISTIC
1000
T
A
= 25˚C
Figure 8.
½
GT
vs.-
τ
CHARACTERISTIC
1.0
T
A
= 25˚C
i
GT
- Gate Trigger Current - mA
½
GT
- Gate Trigger Voltage - V
1
10
100
1000
0.8
100
0.6
10
0.4
1
0.2
0.1
0
1
10
100
1000
τ
- Pulse Width -
μ
s
τ
- Pulse Width -
μ
s
Figure 9. I
H
vs. T
A
CHARACTERISTIC
P
T(AV)
- On-state Average Power Dissipation - W
20
Figure 10. P
T(AV)
vs. I
T(AV)
CHARACTERISTIC
20
18
16
14
12
DC
0˚
I
H
- Holding Current - mA
θ
180˚
Conduction angle
10
10
8
6
4
2
0
0
2
4
6
8
10
12
30˚
120˚
90˚
60˚
θ
= 180˚
0
−40
−20
0
20
40
60
80
100
T
A
- Ambient Temperature -
°C
I
T(AV)
- Average On-state Current - A
Figure 11. T
C
vs. I
T(AV)
RATING
140
0˚
Figure 12. T
A
vs. I
T(AV)
RATING
140
θ
180˚
120
Conduction angle
120
0˚
θ
180˚
Conduction angle
100
T
A
- Ambient Temperature -
°C
T
C
- Case Temperature -
°C
100
80
80
60
θ
= 180˚
60
40
30˚
DC
40
60˚
90˚
120˚
DC
20
60˚
90˚
120˚
20
30˚
θ
= 180˚
0
0
2
4
6
8
10
12
0
0
1.0
2.0
I
T(AV)
- Average On-state Current - A
I
T(AV)
- Average On-state Current - A
4
Data Sheet D17163EJ4V0DS
5P4SMA, 5P6SMA
Figure 13. Z
th
CHARACTERISTIC
Z
th
- Transient Thermal Impedance -
°C/W
100
Junction to ambient
10
Junction to case
1
0.1
0.01
0.1
1
10
t - Time - s
100
1000
10000
Data Sheet D17163EJ4V0DS
5
京公网安备 11010802033920号
EEWORLD
