L810-40T52 datasheet, PDF - EEWORLD Datasheet

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L810-40T52: DescriptionInfrared LED, 2.4mm, 1-Element, 810nm, ROHS COMPLIANT, HERMETIC SEALED, TO-18, 2 PIN; CategoryLED optoelectronic/LED photoelectric; File Size83KB，1 Pages; ManufacturerUshio Opto Semiconductors Inc.

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L810-40T52 Overview

Infrared LED, 2.4mm, 1-Element, 810nm, ROHS COMPLIANT, HERMETIC SEALED, TO-18, 2 PIN

L810-40T52 Parametric

Parameter Name	Attribute value
Maker	Ushio Opto Semiconductors Inc.
package instruction	ROHS COMPLIANT, HERMETIC SEALED, TO-18, 2 PIN
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Configuration	SINGLE
Maximum forward current	0.1 A
Number of functions	1
Maximum operating temperature	80 °C
Minimum operating temperature	-30 °C
Optoelectronic device types	INFRARED LED
Nominal output power	6.5 mW
peak wavelength	810 nm
shape	ROUND
size	2.4 mm
Base Number Matches	1

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epitex

Opto-Device & Custom LED

Φ5

STEM TYPE LED LAMP L810-40T52

Lead ( Pb ) Free Product – RoHS Compliant

L810-40T52

♦Features

1) Wide viewing angle

2) High Reliability

♦Specifications

1) Product Name

2) Type No.

3) Chip Spec.

(1) Material

(2) Peak Wavelength

4) Package

(1) Type

(2) Lens

(3) Cap

stem type LED with wide beam

L810-40T52 is AlGaAs LED mounted on TO-18 stem and hermetically sealed

with flat glass can.

On forward bias it emits a spectral band of radiation, which peaks at 810nm.

♦Outer

dimension(Unit:mm)

Infrared LED Lamp

L810-40T52

AlGaAs

810nm

TO-18 stem

Φ2.4

flat glass lens

Gold plated

♦Absolute

Maximum Ratings

Item

Symbol

Maximum Rated Value

Unit

Ambient Temperature

Power Dissipation

P

D

170

mW

Ta=25°C

Forward Current

I

F

100

mA

Ta=25°C

Pulse Forward Current

I

FP

500

mA

Ta=25°C

Reverse Voltage

V

R

5

V

Ta=25°C

Operating Temperature

T

OPR

-30 ~ +80

°C

-30 ~ +100

°C

Storage Temperature

T

STG

Soldering Temperature

T

SOL

265

°C

‡

Pulse Forward Current condition: Duty=1% and Pulse Width=10us.

‡

Soldering condition : Soldering condition must be completed within 3 seconds at 265°C

♦Electro-Optical

Characteristics

Item

Symbol Condition

Minimum

Forward Voltage

V

F

I

F

=50mA

Reverse Current

I

R

V

R

=5V

Total Radiated Power

P

O

I

F

=50mA

4

Radiant Intensity

I

E

I

F

=50mA

790

Peak Wavelength

I

F

=50mA

λ

P

Half Width

I

F

=50mA

∆λ

Viewing Half Angle

I

F

=50mA

θ

1/2

Rise Time

tr

I

F

=50mA

Fall Time

tf

I

F

=50mA

‡

Total Radiated Power is measured by Photodyne #500

‡

Radiant Intensity is measured by Tektronix J-6512.

Typical

1.60

6.5

4.0

810

35

±55

60

40

Maximum

1.80

10

Unit

V

uA

mW

mW/sr

nm

deg.

ns

830

EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan

Tel: ++81-75-682-2338

Fax: ++81-75-682-2267

e-mail: sales-dep@epitex.com

http://www.epitex.com

L810-40T52 Related Products

	L810-40T52
Description	Infrared LED, 2.4mm, 1-Element, 810nm, ROHS COMPLIANT, HERMETIC SEALED, TO-18, 2 PIN
Maker	Ushio Opto Semiconductors Inc.
package instruction	ROHS COMPLIANT, HERMETIC SEALED, TO-18, 2 PIN
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Configuration	SINGLE
Maximum forward current	0.1 A
Number of functions	1
Maximum operating temperature	80 °C
Minimum operating temperature	-30 °C
Optoelectronic device types	INFRARED LED
Nominal output power	6.5 mW
peak wavelength	810 nm
shape	ROUND
size	2.4 mm
Base Number Matches	1

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