JANTX1N981C-1 datasheet, PDF - EEWORLD Datasheet

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JANTX1N981C-1: DescriptionZener Diode, 68V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-204AH,; CategoryDiscrete semiconductor diode; File Size209KB，28 Pages; ManufacturerCompensated Devices Inc.

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JANTX1N981C-1 Overview

Zener Diode, 68V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-204AH,

JANTX1N981C-1 Parametric

Parameter Name	Attribute value
Maker	Compensated Devices Inc.
package instruction	O-LALF-W2
Reach Compliance Code	unknown
Other features	METALLURGICALLY BONDED
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JEDEC-95 code	DO-204AH
JESD-30 code	O-LALF-W2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.48 W
Certification status	Not Qualified
Nominal reference voltage	68 V
surface mount	NO
technology	ZENER
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	2%
Working test current	1.8 mA
Base Number Matches	1

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 6 January 2006.

INCH-POUND

MIL-PRF-19500/117N

6 October 2005

SUPERSEDING

MIL-PRF-19500/117M

13 January 2004

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH

1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1

THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC

JANS level (see 6.4).

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall

consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator

diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided

for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for

each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).

* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and

as follows:

a. P

= 500 mW, (DO-35) at T

= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink

at L = .375 inch (9.53 mm). Derate I

to 0.0 mA dc at +175°C.

b. P

TEC

= 500 mW, (DO-213AA) at T

= +125°C, derate to 0 at +175°C. -65°C

≤

+175°C; -65°C

≤

STG

≤

+175°C.

c. P

T(PCB)

= 500 mW, T

= 75°C.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil.

Since

contact information can change, you may want to verify the currency of this address information using the ASSIST

Online database at

http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

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