1G bits DDR2 SDRAM
Parameter Name | Attribute value |
Maker | ELPIDA |
Parts packaging code | BGA |
package instruction | TFBGA, |
Contacts | 60 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
access mode | MULTI BANK PAGE BURST |
Maximum access time | 0.45 ns |
Other features | AUTO/SELF REFRESH |
JESD-30 code | R-PBGA-B60 |
length | 10.5 mm |
memory density | 1073741824 bi |
Memory IC Type | DDR DRAM |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 60 |
word count | 134217728 words |
character code | 128000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 95 °C |
Minimum operating temperature | |
organize | 128MX8 |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Certification status | Not Qualified |
Maximum seat height | 1.2 mm |
self refresh | YES |
Maximum supply voltage (Vsup) | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
width | 8 mm |
EDE1108AFBG-6E-F | EDE1108AFBG-8E-F | EDE1108AFBG-8G-F | EDE1108AFBG | |
---|---|---|---|---|
Description | 1G bits DDR2 SDRAM | 1G bits DDR2 SDRAM | 1G bits DDR2 SDRAM | 1G bits DDR2 SDRAM |
Maker | ELPIDA | ELPIDA | ELPIDA | - |
Parts packaging code | BGA | BGA | BGA | - |
package instruction | TFBGA, | TFBGA, | TFBGA, | - |
Contacts | 60 | 60 | 60 | - |
Reach Compliance Code | unknow | unknow | unknow | - |
ECCN code | EAR99 | EAR99 | EAR99 | - |
access mode | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | - |
Maximum access time | 0.45 ns | 0.4 ns | 0.4 ns | - |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | - |
JESD-30 code | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | - |
length | 10.5 mm | 10.5 mm | 10.5 mm | - |
memory density | 1073741824 bi | 1073741824 bi | 1073741824 bi | - |
Memory IC Type | DDR DRAM | DDR DRAM | DDR DRAM | - |
memory width | 8 | 8 | 8 | - |
Number of functions | 1 | 1 | 1 | - |
Number of ports | 1 | 1 | 1 | - |
Number of terminals | 60 | 60 | 60 | - |
word count | 134217728 words | 134217728 words | 134217728 words | - |
character code | 128000000 | 128000000 | 128000000 | - |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - |
Maximum operating temperature | 95 °C | 95 °C | 95 °C | - |
organize | 128MX8 | 128MX8 | 128MX8 | - |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
encapsulated code | TFBGA | TFBGA | TFBGA | - |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | - |
Certification status | Not Qualified | Not Qualified | Not Qualified | - |
Maximum seat height | 1.2 mm | 1.2 mm | 1.2 mm | - |
self refresh | YES | YES | YES | - |
Maximum supply voltage (Vsup) | 1.9 V | 1.9 V | 1.9 V | - |
Minimum supply voltage (Vsup) | 1.7 V | 1.7 V | 1.7 V | - |
Nominal supply voltage (Vsup) | 1.8 V | 1.8 V | 1.8 V | - |
surface mount | YES | YES | YES | - |
technology | CMOS | CMOS | CMOS | - |
Temperature level | OTHER | OTHER | OTHER | - |
Terminal form | BALL | BALL | BALL | - |
Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | - |
Terminal location | BOTTOM | BOTTOM | BOTTOM | - |
width | 8 mm | 8 mm | 8 mm | - |