EDE1108AFBG-8G-F datasheet, PDF

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EDE1108AFBG-8G-F: Description1G bits DDR2 SDRAM; Categorystorage storage; File Size692KB，78 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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EDE1108AFBG-8G-F Overview

1G bits DDR2 SDRAM

EDE1108AFBG-8G-F Parametric

Parameter Name	Attribute value
Maker	ELPIDA
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	60
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.4 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B60
length	10.5 mm
memory density	1073741824 bi
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature
organize	128MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8 mm

EDE1108AFBG-8G-F Related Products

	EDE1108AFBG-8G-F	EDE1108AFBG-8E-F	EDE1108AFBG	EDE1108AFBG-6E-F
Description	1G bits DDR2 SDRAM	1G bits DDR2 SDRAM	1G bits DDR2 SDRAM	1G bits DDR2 SDRAM
Maker	ELPIDA	ELPIDA	-	ELPIDA
Parts packaging code	BGA	BGA	-	BGA
package instruction	TFBGA,	TFBGA,	-	TFBGA,
Contacts	60	60	-	60
Reach Compliance Code	unknow	unknow	-	unknow
ECCN code	EAR99	EAR99	-	EAR99
access mode	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	-	MULTI BANK PAGE BURST
Maximum access time	0.4 ns	0.4 ns	-	0.45 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B60	R-PBGA-B60	-	R-PBGA-B60
length	10.5 mm	10.5 mm	-	10.5 mm
memory density	1073741824 bi	1073741824 bi	-	1073741824 bi
Memory IC Type	DDR DRAM	DDR DRAM	-	DDR DRAM
memory width	8	8	-	8
Number of functions	1	1	-	1
Number of ports	1	1	-	1
Number of terminals	60	60	-	60
word count	134217728 words	134217728 words	-	134217728 words
character code	128000000	128000000	-	128000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
Maximum operating temperature	95 °C	95 °C	-	95 °C
organize	128MX8	128MX8	-	128MX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	-	TFBGA
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH
Certification status	Not Qualified	Not Qualified	-	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	-	1.2 mm
self refresh	YES	YES	-	YES
Maximum supply voltage (Vsup)	1.9 V	1.9 V	-	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	-	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	-	1.8 V
surface mount	YES	YES	-	YES
technology	CMOS	CMOS	-	CMOS
Temperature level	OTHER	OTHER	-	OTHER
Terminal form	BALL	BALL	-	BALL
Terminal pitch	0.8 mm	0.8 mm	-	0.8 mm
Terminal location	BOTTOM	BOTTOM	-	BOTTOM
width	8 mm	8 mm	-	8 mm

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