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GBJ2508

Description
25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerSIRECTIFIER
Websitehttp://www.sirectifier.com
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GBJ2508 Overview

25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ25005 thru GBJ2510
Single Phase Bridge Rectifiers
Dimensions GBJ(RS6M)
GBJ25005
GBJ2501
GBJ2502
GBJ2504
GBJ2506
GBJ2508
GBJ2510
V
RRM
V
50
100
200
400
600
800
1000
V
RMS
V
35
70
140
280
420
560
700
V
DC
V
50
100
200
400
600
800
1000
Symbol
I
(AV)
I
FSM
V
F
I
R
I
2
t
C
J
R
OJC
T
J
T
STG
Characteristics
Maximum Average Forward (With Heatsink Note 2)
Rectified Current @T
C
=100
o
C (Without Heatsink)
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 12.5A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
I
2
t Rating For Fusing (t < 8.3 ms)
Typical Junction Capacitance Per Element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25
o
C
@T
J
=125
o
C
Maximum Ratings
25.0
4.2
350
1.05
10
500
510
85
0.6
-55 to +150
-55 to +150
Unit
A
A
V
uA
A
2
S
pF
o
C/W
o
o
C
C
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Device Mounted On 300mm x 300mm x 1.6mm Cu Plate Heatsink.
FEATURES
* Rating to 1000V PRV
* Ideal for printed circuit board
* Low forward voltage drop, high current capability
* Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
MECHANICAL DATA
* Polarity: Symbols molded on body
* Weight: 0.23 ounces, 6.6 grams
* Mounting position: Any

GBJ2508 Related Products

GBJ2508 GBJ25005 GBJ2501 GBJ2502 GBJ2504 GBJ2510 GBJ2506
Description 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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