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GBU606

Description
6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size234KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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GBU606 Overview

6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

GBU606 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage800 V
Maximum average input current6 A
Processing package descriptionGREEN, PLASTIC, GBU, 4 PIN
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingPURE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Shell connectionisolation
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage800 V
Maximum non-repetitive peak forward current175 A
GBU6005 THRU GBU610
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIERS
Reverse Voltage – 50 to 1000 Volts
Forward Current – 6.0 Amperes
Features
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Glass passivated chip junction
Reliable low cost construction utilizing molded
plastic technique
Mechanical Data
Case:
Molded plastic GBU
Terminals:
leads solderable per MIL-STD-202
Method 208 guaranteed
Mounting Position:
Any
Absolute Maximum Ratings and Characteristics
Rating at 25℃ ambient temperature unless otherwise specified. Single-phase, half wave, 60Hz, resistive or inductive
load. For capacitive load, derate current by 20%.
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 100℃ (Note 1), (Note 2)
Peak forward surge current,8.3ms single half-sine-wave
superimposed on rated load (JEDEC Method)
Maximum forward voltage
at 3.0A DC and 25℃
Maximum reverse current at T
A
= 25℃
at rated DC blocking voltage T
A
= 125℃
Typical junction capacitance (Note 3)
Typical thermal resistance (Note 1),(Note 2)
Typical thermal resistance (Note 1),(Note 2)
Operating and storage temperature range
I
F(AV)
I
FSM
V
F
I
R
C
J
R
θ
JA
R
θ
JC
T
J
,T
S
211
7.4
2.2
-55 to +150
6
175
1
5
500
94
A
A
V
µA
pF
℃/W
℃/W
V
RRM
V
RMS
V
DC
GBU
6005
50
35
50
GBU
601
100
70
100
GBU
602
200
140
200
GBU
604
400
280
400
GBU
606
600
420
600
GBU
608
800
560
800
GBU
610
1000
700
1000
Units
V
V
V
Notes: (1). Units case mounted on 2.6x1.4x0.06” thick (6.5x3.5x0.15 cm) AI. plate heatsink..
(2). Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum
heat transfer with #6 screws.
(3). Measured at 1MHz and applied reverse voltage of 4.0 VDC.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 16/02/2004

GBU606 Related Products

GBU606 GBU601 GBU604 GBU6005 GBU602 GBU610 GBU608
Description 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W

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